JPS6447048U - - Google Patents

Info

Publication number
JPS6447048U
JPS6447048U JP14167687U JP14167687U JPS6447048U JP S6447048 U JPS6447048 U JP S6447048U JP 14167687 U JP14167687 U JP 14167687U JP 14167687 U JP14167687 U JP 14167687U JP S6447048 U JPS6447048 U JP S6447048U
Authority
JP
Japan
Prior art keywords
switching transistor
memory device
impurity region
wiring layer
stacked capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14167687U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14167687U priority Critical patent/JPS6447048U/ja
Publication of JPS6447048U publication Critical patent/JPS6447048U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP14167687U 1987-09-18 1987-09-18 Pending JPS6447048U (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14167687U JPS6447048U (en]) 1987-09-18 1987-09-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14167687U JPS6447048U (en]) 1987-09-18 1987-09-18

Publications (1)

Publication Number Publication Date
JPS6447048U true JPS6447048U (en]) 1989-03-23

Family

ID=31406954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14167687U Pending JPS6447048U (en]) 1987-09-18 1987-09-18

Country Status (1)

Country Link
JP (1) JPS6447048U (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110634835A (zh) * 2018-06-21 2019-12-31 三菱电机株式会社 半导体装置及其制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110634835A (zh) * 2018-06-21 2019-12-31 三菱电机株式会社 半导体装置及其制造方法
CN110634835B (zh) * 2018-06-21 2023-10-24 三菱电机株式会社 半导体装置及其制造方法

Similar Documents

Publication Publication Date Title
JPS6447048U (en])
JPH0612804B2 (ja) 半導体記憶装置
JPH0383939U (en])
JPS6477158A (en) Memory device
JPS60166157U (ja) 集積回路メモリ
JPS6263948U (en])
JPH0258346U (en])
JPS60125751U (ja) 半導体スイツチング素子
JPH0176066U (en])
JPS641271A (en) Memory cell
JPS62188159U (en])
JPH01165660U (en])
JPH0446542U (en])
JPH065806A (ja) 半導体装置
JPS6197868U (en])
JPS62188160U (en])
JPH0224563U (en])
JPS63128726U (en])
JPS6186957U (en])
JPS6263939U (en])
JPS6480061A (en) Semiconductor integrated circuit device and manufacture thereof
JPH0369253U (en])
JPS63167754U (en])
JPS63174464U (en])
JPH0388358U (en])